TPD3215M Transphorm CASCODE GAN HB 600V 70A MODULE Mosfet Array GaNFET N-Channel, Gallium Nitride 600V 70A (Tc) 470W Through Hole Module

Part Nnumber

TPD3215M

Description

CASCODE GAN HB 600V 70A MODULE Mosfet Array GaNFET N-Channel, Gallium Nitride 600V 70A (Tc) 470W Through Hole Module

Producer

Transphorm

Basic price

174,02 EUR

The product with part number TPD3215M (CASCODE GAN HB 600V 70A MODULE Mosfet Array GaNFET N-Channel, Gallium Nitride 600V 70A (Tc) 470W Through Hole Module) is from company Transphorm and distributed with basic unit price 174,02 EUR. Minimal order quantity is 1 pc, Approx. production time is 98 weeks.

Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Arrays Manufacturer Transphorm Series - Packaging Bulk Part Status Active FET Type GaNFET N-Channel, Gallium Nitride FET Feature Standard Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 70A (Tc) Rds On (Max) @ Id, Vgs 34 mOhm @ 30A, 8V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 28nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 2260pF @ 100V Power - Max 470W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case Module Supplier Device Package Module

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(keyword TPD3215M Transphorm CASCODE GAN HB 600V 70A MODULE Mosfet Array GaNFET N-Channel, Gallium Nitride 600V 70A (Tc) 470W Through Hole Module)

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